Yahyazadeh R, Hashempour Z. Effect of Hydrostatic Pressure on the Revers Gate-Current of AlGaN/GaN HEMTs. ijie [Internet]. 2021 Nov. 23 [cited 2024 Jul. 23];13(5):276-87. Available from: https://penerbit.uthm.edu.my/ojs/index.php/ijie/article/view/6713