The Effect of Annealing Treatment on n-Cu2O Thin Film Fabrication

Abstract

This experiment is about fabrication of homojunction n-type cuprous oxide (Cu₂O) thin film by using electrodeposition method. The Cu₂O thin films were deposited on fluorine doped tin oxide (FTO) substrates by using copper acetate based solution through potentiostatic electrodeposition method. The n-type Cu₂O was fabricated at pH 6.3 with a fixed potential of -0.125V vs. Ag/AgCl and time deposition of 30 minutes. Annealing treatment was introduced to enhance the properties of the thin films.  The quality of Cu₂O thin films were studied in varied the annealing duration. Morphological, structural, optical and electrical properties were characterized using X-Ray Diffractometer, Field Emission-Scanning Electron Microscopy, Ultraviolet-visible Spectroscopy and Four Point Probe, respectively.